Thermco Minibrute Furnace Stack Bay #1
| TUBE | #1 (top tube) |
| DESCRIPTION | TBA |
| SUBSTRATES ALLOWED | TBA |
| MATERIALS (FILMS) ALLOWED | TBA |
| GASES ALLOWED | TBA |
| MAX TEMPERATURES | TBA |
| TUBE | #2 |
| DESCRIPTION | General oxidation / Anneal |
| SUBSTRATES ALLOWED | Aluminum Oxide, Gallium Nitride, Germanium, Silicon, Quartz |
| MATERIALS (FILMS) ALLOWED | Aluminum, Aluminum Oxide, Cadmium Sulfide (no powder, small area patterned and encapsulated-max temp=150C), Cadmium Telluride, Chromium Boride, Chromium, Cobalt, Cobalt Silicide, Copper, Gold, Hafnium, Hafnium Oxide, Indium Sulfide (no powder – max temp = 150C), Nickel, Nickel Silicide, Magnesium Silicide, Molybdenum, Molybdenum Silicide, Platinum, Platinum Silicide, Silicon, Silicon Carbide, Silicon Nitride, Silicon Oxide, Silver doped Oxide, Tantalum, Tantalum Nitride, Titanium, Titanium Nitride, Titanium Oxide, Titanium Silicide, Tungsten, Tungsten Silicide, Zinc Sulfide |
| GASES ALLOWED | Forming gas (5%H2 / N2), Nitrogen, Oxygen (with staff approval) |
| MAX TEMPERATURES | 450C when using forming gas, 1100C with N2 and O2 (staff approval) |
PROCESS STEPS FOR MINIBRUTE TUBES #2 AND #3.
- Prior to loading samples – gas selector in IDLE (house N2)
- Set furnace temperature (maximum 450C; higher with staff approval)
- Select N2 process gas
- Purge 5 minutes (N2 process gas)
- Select desired process gas for run.
- Purge 5 minutes in selected process gas
- Load samples
- Run process
- Unload samples with process gas flowing
- Turn gas selector to IDLE (house N2)
| TUBE | #3 |
| DESCRIPTION | Silicon Compatible Forming gas anneal – metal |
| SUBSTRATES ALLOWED | Aluminum Oxide, Gallium Nitride, Germanium, Silicon, and Quartz |
| MATERIALS (FILMS) ALLOWED | Aluminum, Aluminum Oxide, Cobalt, Cobalt Silicide, Hafnium, Hafnium Oxide, Nickel, Nickel Silicide, Molybdenum, Molybdenum Silicide, Platinum Silicide (not Platinum), Silicon, Silicon Nitride, Silicon Oxide, Tantalum, Tantalum Nitride, Titanium, Titanium Nitride, Titanium Oxide, Titanium Silicide, Tungsten, Tungsten Silicide, Ytterbium Silicide. |
| GASES ALLOWED | Forming gas (5%H2 / N2), Nitrogen, Oxygen (with staff approval) |
| MAX TEMPERATURES | 450C when using forming gas, 1100C with N2, O2 (staff approval) |
| TUBE | #4 (bottom tube) |
| DESCRIPTION | Silicon Only – Oxidation (wet / dry). |
| SUBSTRATES ALLOWED | Silicon and Quartz |
| MATERIALS (FILMS) ALLOWED | Silicon, Silicon Oxide, and Silicon Nitride |
| GASES ALLOWED | Oxygen, Nitrogen |
| MAX TEMPERATURES | 1100C |