The Tystar Low-Pressure-Chemical-Vapor-Deposition (LPCVD) tool consists of four horizontal sub-atmospheric furnace tubes that can process up to 6″ diameter silicon wafers. The furnaces are fully computer controlled and are configured to deposit doped and undoped polysilicon, silicon dioxide, and silicon nitride films. The object is capable of depositing films with wafer-to-wafer and within-wafer uniformity of better than 5%. This tool was donated to UTD by the Von Ehr Foundation.
Qualification Data
Qualification runs and monitor wafers
Process Data
Process Data T1: Silicon-Nitride
Process Data T1: Low-Stress Nitride
Process Data T3: N+ PolySilicon
Process Data T3: P+ PolySilicon
Process Data: Low-Temperature Oxide
Control Charts
Control Chart: Silicon Nitride
Control Chart: Low-Stress Nitride
Control Chart: Low-Temperature Oxide
PM Details
Posted under Cleanroom