The four-stack Tystar atmospheric furnace system provides basic oxidation and annealing capabilities needed for silicon transistor and MEMS fabrication on wafers up to 150 mm in diameter. The system is presently configured with two oxidation tubes and two tubes for solid-source diffusion and annealing of N and P type dopants. The furnaces are fully computer-controlled and feature automated load/unload stations and remote recipe editing and download.
Process Data
T5: General Oxidation 10nm Oxide Process Data
T6: Gate Oxidation 10nm Oxide Process Data
T7: P-Type Diffusion Process Data
T8: N-Type Diffusion Process Data
Control Charts
Tube 5: 10nm Oxide Control Chart
Tube 6: 10nm Oxide Control Chart
MOSCAP Data
Tube 5: 10nm Ox BV MOSCAP Data
Tube 5: 10nm Ox CV MOSCAP Data
Tube 6: 10nm Ox BV MOSCAP Data
Tube 6: 10nm Ox CV MOSCAP Data
Posted under Cleanroom